The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2021

Filed:

Dec. 23, 2019
Applicants:

Flosfia Inc., Kyoto, JP;

Denso Corporation, Kariya, JP;

Inventors:

Isao Takahashi, Kyoto, JP;

Tatsuya Toriyama, Kyoto, JP;

Masahiro Sugimoto, Kyoto, JP;

Takashi Shinohe, Kyoto, JP;

Hideyuki Uehigashi, Kariya, JP;

Junji Ohara, Kariya, JP;

Fusao Hirose, Kariya, JP;

Hideo Matsuki, Kariya, JP;

Assignees:

FLOSFIA INC., Kyoto, JP;

DENSO CORPORATION, Kariya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/24 (2006.01); H01L 21/02 (2006.01); C23C 16/448 (2006.01); H01L 23/367 (2006.01); H01L 29/04 (2006.01); H01L 29/739 (2006.01); H01L 29/778 (2006.01); H01L 29/78 (2006.01); H01L 29/808 (2006.01); H01L 29/872 (2006.01); H01L 33/26 (2010.01); H02M 3/335 (2006.01);
U.S. Cl.
CPC ...
H01L 29/24 (2013.01); C23C 16/4481 (2013.01); H01L 21/0262 (2013.01); H01L 21/02565 (2013.01); H01L 23/367 (2013.01); H01L 29/045 (2013.01); H01L 29/7395 (2013.01); H01L 29/7786 (2013.01); H01L 29/7827 (2013.01); H01L 29/8083 (2013.01); H01L 29/872 (2013.01); H01L 33/26 (2013.01); H02M 3/33569 (2013.01);
Abstract

A crystalline oxide semiconductor with excellent crystalline qualities that is useful for semiconductors requiring heat dissipation is provided. A crystalline oxide semiconductor including a first crystal axis, a second crystal axis, a first side, and a second side that is shorter than the first side, a linear thermal expansion coefficient of the first crystal axis is smaller than a linear thermal expansion coefficient of the second crystal axis, a direction of the first side is parallel and/or substantially parallel to a direction of the first crystal axis, and a direction of the second side is parallel and/or substantially parallel to a direction of the second crystal axis.


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