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Central Research Institute of Electric Power Industry

USPTO Granted Patents = 110

CIPO Patents = 4

EPO Patents = 26

Forward Citations = 495

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269 inventors (with patents filed for the assignee):

Hidekazu Tsuchida (26 out of 46 patents)

Isaho Kamata (16 out of 26 patents)

Koji Nakayama (9 out of 38 patents)

4. Toshiyuki Miyanagi (9 out of 10 patents)

5. Yoshitaka Sugawara (8 out of 24 patents)

6. Tomonori Nakamura (7 out of 8 patents)

7. Masahiro Furuya (7 out of 7 patents)

8. Michiharu Ichikawa (6 out of 7 patents)

9. Ataru Ichinose (6 out of 6 patents)

10. Masahiko Ito (5 out of 31 patents)

11. Masami Naito (5 out of 21 patents)

12. Hiroaki Fujibayashi (5 out of 15 patents)

13. Ryosuke Ishii (5 out of 5 patents)

14. Hideyuki Uehigashi (4 out of 9 patents)

15. Hirofumi Takeda (4 out of 4 patents)

Core Competencies:

Silicon Carbide

Epitaxial Wafer

Gas Leakage Detection

Vibration Energy Harvester

Semiconductor Device

Fuel Cell Technology

Power Generation

Film Forming Apparatus

Corrosion Monitoring

Organic Field-Effect Transistor

Superconducting Film

Water Quality Measurement

110 patents: Sort by Forward Citations

1. 12281410 - Method and apparatus for manufacturing silicon carbide single crystal, and silicon carbide single crystal ingot (2025-04-21),

2. 12062162 - Image processing device, image processing method, and recording medium (2024-08-13),

3. 11846040 - Silicon carbide single crystal (2023-12-19),

4. 11326974 - Gas leakage detection method and gas leakage detection apparatus in horizontally-installed canister (2022-05-10),

5. 11107892 - SiC epitaxial wafer and method for producing same (2021-08-31),

6. 11081246 - Cooling air amount adjustment device of concrete cask and concrete cask (2021-08-03),

7. 10896831 - Film forming apparatus (2021-01-19),

8. 10309379 - Vibration energy harvester (2019-06-04),

9. 10262863 - Method for manufacturing SiC epitaxial wafer by simultaneously utilizing an N-based gas and a CI-based gas, and SiC epitaxial growth apparatus (2019-04-16),

10. 10145754 - Method and apparatus for detecting gas leakage from radioactive material sealed container (2018-12-04),

11. 10119881 - Method and apparatus for detecting gas leakage from radioactive material sealed container (2018-11-06),

12. 9879359 - Silicon carbide semiconductor film-forming apparatus and film-forming method using the same (2018-01-30),

13. 9598792 - Film-forming apparatus and film-forming method (2017-03-21),

14. 9508459 - Method to prevent stress corrosion cracking of storage canister and storage canister (2016-11-29),

15. 9496345 - Semiconductor structure, semiconductor device, and method for producing semiconductor structure (2016-11-15),

Centrally researches, tests, and explores developments related to the electric power industry in Japan. Conducts studies and provides technical support for various aspects of the industry including power generation, transmission, and distribution.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 23 2025

110 Patents

#450 in

#1,034 in

#6,950 in the World

Central Research Institute of Electric Power Industry

Forward Citations = 495

269 inventors:

Hidekazu Tsuchida (26 out of 46 patents)

Isaho Kamata (16 out of 26 patents)

Koji Nakayama (9 out of 38 patents)

4. Toshiyuki Miyanagi (9 out of 10 patents)

5. Yoshitaka Sugawara (8 out of 24 patents)

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