The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2025
Filed:
Oct. 11, 2021
Central Research Institute of Electric Power Industry, Tokyo, JP;
Denso Corporation, Kariya, JP;
Norihiro Hoshino, Yokosuka, JP;
Isaho Kamata, Yokosuka, JP;
Hidekazu Tsuchida, Yokosuka, JP;
Takahiro Kanda, Kariya, JP;
Takeshi Okamoto, Kariya, JP;
CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY, Tokyo, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A method and an apparatus for manufacturing a silicon carbide single crystal, and a silicon carbide single crystal ingot, obtaining a silicon carbide single crystal reduced in defects such as threading dislocations, are provided. The method manufactures a silicon carbide single crystal by supplying a raw material gas into a reaction vessel with a seed substrate, and heats the interior to grow a silicon carbide single crystal on the surface of the seed substrate. The method includes growing the silicon carbide single crystal on the seed substrate surface, while controlling the temperature, to perform pair annihilation of threading dislocations or synthesis of the threading dislocations; and a second step of maintaining the temperature inside the reaction vessel in the state of the first predetermined temperature after execution of the first step, to bring the leading ends of the threading dislocations close to the surface of the seed substrate.