Tokyo, Japan

Norihiro Hoshino

This inventor holds 7 USPTO granted patents and 5 published patent applications. Top assignees: Denso Corporation, Central Research Institute of Electric Power Industry, Mirise Technologies Corporation. Active years: 2023-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Norihiro Hoshino. Retrieved from https://idiyas.com/inventor/norihiro-hoshino

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 7 

% Patents Active = 71.4

Average Co-Inventor Count = 5.3

ph-index = 1

Forward Citations = 1(Granted Patents)


Location History:

  • Yokosuka, JP (2023)
  • Tokyo, JP (2024)

Company Filing History:


Years Active: 2023-2026

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7 patents (USPTO):Explore Patents

Title: Norihiro Hoshino: Innovator in Silicon Carbide Technology

Introduction

Norihiro Hoshino is a prominent inventor based in Tokyo, Japan, known for his significant contributions to the field of silicon carbide technology. With a total of five patents to his name, Hoshino has made remarkable advancements in the manufacturing processes of silicon carbide ingots and single crystals.

Latest Patents

Hoshino's latest patents include innovative methods for producing silicon carbide ingots that minimize defects such as screw dislocations. One of his notable inventions is a silicon carbide ingot that features micropipes in a seed crystal, which are closed and reduced in the gathering of screw dislocations. This invention also encompasses a method for manufacturing the silicon carbide ingot and a method for producing silicon carbide wafers. The ingot consists of a seed crystal made of silicon carbide single crystal, a buffer layer of silicon carbide, and a bulk crystal growth layer, all designed to enhance the quality of the final product.

Another significant patent involves a method and apparatus for manufacturing silicon carbide single crystals and ingots. This method aims to reduce defects like threading dislocations by supplying a raw material gas into a reaction vessel with a seed substrate. The process includes controlling the temperature to facilitate the annihilation of threading dislocations, ensuring a high-quality silicon carbide single crystal.

Career Highlights

Throughout his career, Hoshino has worked with esteemed organizations such as Denso Corporation and the Central Research Institute of Electric Power Industry. His experience in these companies has contributed to his expertise in silicon carbide technology and its applications.

Collaborations

Hoshino has collaborated with notable colleagues, including Isaho Kamata and Hidekazu Tsuchida, further enhancing his research and development efforts in the field.

Conclusion

Norihiro Hoshino's innovative work in silicon carbide technology has positioned him as a key figure in the industry. His patents reflect a commitment to advancing manufacturing processes and improving material quality.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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