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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12297562 B1

PDFFull Text
Date of Patent:
May. 13, 2025

Filed:

Nov. 30, 2022

Silicon carbide ingot including screw dislocations

Applicants:

Mirise Technologies Corporation, Nisshin, JP;

Denso Corporation, Kariya, JP;

Toyota Jidosha Kabushiki Kaisha, Toyota, JP;

Inventors:

Isaho Kamata, Tokyo, JP;

Norihiro Hoshino, Tokyo, JP;

Kiyoshi Betsuyaku, Tokyo, JP;

Hidekazu Tsuchida, Tokyo, JP;

Takeshi Okamoto, Nisshin, JP;

Akiyoshi Horiai, Nisshin, JP;

Assignees:

1)MIRISE Technologies Corporation, Nisshin, JP;

2)DENSO CORPORATION, Kariya, JP;

3)TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;

Attorney:

Posz Law Group, PLC

Primary Examiner:

Ida M Soward

Int. Cl.
CPC ...
C30B 29/36 (2006.01); C30B 23/00 (2006.01); C01B 32/956 (2017.01); H10D 62/822 (2025.01); H10D 62/832 (2025.01);
U.S. Cl.
CPC ...
C30B 29/36 (2013.01); C30B 23/002 (2013.01); C01B 32/956 (2017.08); H10D 62/822 (2025.01); H10D 62/8325 (2025.01);
Abstract

A silicon carbide ingot having micropipes in a seed crystal closed and being reduced in the gathering of screw dislocations, a method for manufacturing the silicon carbide ingot, and a method for manufacturing a silicon carbide wafer are provided. The silicon carbide ingot includes a seed crystal composed of a silicon carbide single crystal and having micropipes being hollow defects; a buffer layer provided on the seed crystal and composed of silicon carbide; and a bulk crystal growth layer provided on the buffer layer and composed of silicon carbide. The buffer layer and the bulk crystal growth layer have a plurality of screw dislocations continuous with the micropipes closed with the buffer layer, and the plurality of screw dislocations having the micropipe in common in the bulk crystal growth layer are 150 um or more apart from each other.

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Kamata, Isaho. (2025). Silicon carbide ingot including screw dislocations (U.S. Patent No. 12297562). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12297562

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