The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2025
Filed:
Sep. 22, 2020
Applicant:
Denso Corporation, Kariya, JP;
Inventors:
Isaho Kamata, Tokyo, JP;
Hidekazu Tsuchida, Tokyo, JP;
Norihiro Hoshino, Tokyo, JP;
Yuichiro Tokuda, Kariya, JP;
Takeshi Okamoto, Kariya, JP;
Assignee:
DENSO CORPORATION, Kariya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/36 (2006.01); C30B 25/00 (2006.01); C30B 25/02 (2006.01); C30B 25/10 (2006.01); C30B 33/00 (2006.01); B32B 3/26 (2006.01);
U.S. Cl.
CPC ...
C30B 29/36 (2013.01); C30B 25/00 (2013.01); C30B 25/02 (2013.01); C30B 25/10 (2013.01); C30B 33/00 (2013.01); B32B 3/266 (2013.01); Y10T 428/218 (2015.01); Y10T 428/24273 (2015.01); Y10T 428/24298 (2015.01);
Abstract
In a silicon carbide single crystal wafer, a dislocation density contained therein is 3500 dislocations/cmor less, and a difference of the dislocation density among a wafer central part, a wafer peripheral part and a wafer intermediate part is less than 50% of an average value thereof.