Company Filing History:
9 out of 110 
3 out of 195 
1 out of 2 Years Active: 2009-2013
Title: The Innovations of Toshiyuki Miyanagi
Introduction
Toshiyuki Miyanagi is a prominent inventor based in Yokosuka, Japan. He has made significant contributions to the field of semiconductor technology, particularly in bipolar semiconductor devices. With a total of 10 patents to his name, Miyanagi's work has had a profound impact on the efficiency and performance of these devices.
Latest Patents
Miyanagi's latest patents include a method for recovering an on-state forward voltage and shrinking stacking faults in bipolar semiconductor devices. This innovation addresses the issue of increased on-state forward voltage in silicon carbide bipolar semiconductor devices. By heating the device at temperatures higher than 350°C, the method effectively reduces the stacking fault area that enlarges during on-state forward bias operation. Another notable patent is the process for producing silicon carbide semiconductor devices, which focuses on reducing defects that act as nuclei for stacking faults. This method involves thermal treatment at temperatures of 300°C or higher, ideally after the formation of electrodes.
Career Highlights
Throughout his career, Miyanagi has worked with esteemed organizations such as the Central Research Institute of Electric Power Industry and Kansai Electric Power Co., Inc. His experience in these institutions has allowed him to develop and refine his innovative approaches to semiconductor technology.
Collaborations
Miyanagi has collaborated with notable colleagues, including Hidekazu Tsuchida and Tomon