The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2012
Filed:
Nov. 22, 2006
Applicants:
Tomonori Nakamura, Yokosuka, JP;
Hidekazu Tsuchida, Yokosuka, JP;
Toshiyuki Miyanagi, Yokosuka, JP;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
Abstract
An intermediate metal film is formed between a Schottky electrode and a pad electrode. A Schottky barrier height between the intermediate metal film and a silicon carbide epitaxial film is equivalent to or higher than a Schottky barrier height between the Schottky electrode and the silicon carbide epitaxial film. By this configuration, an excess current and a leak current through a pin-hole can be suppressed even in the case in which a Schottky barrier height between the pad electrode and the silicon carbide epitaxial film is less than the Schottky barrier height between the Schottky electrode and the silicon carbide epitaxial film.