The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2013
Filed:
Aug. 04, 2006
Toshiyuki Miyanagi, Yokosuka, JP;
Hidekazu Tsuchida, Yokosuka, JP;
Isaho Kamata, Yokosuka, JP;
Yoshitaka Sugawara, Osaka, JP;
Koji Nakayama, Osaka, JP;
Ryosuke Ishii, Osaka, JP;
Toshiyuki Miyanagi, Yokosuka, JP;
Hidekazu Tsuchida, Yokosuka, JP;
Isaho Kamata, Yokosuka, JP;
Yoshitaka Sugawara, Osaka, JP;
Koji Nakayama, Osaka, JP;
Ryosuke Ishii, Osaka, JP;
Abstract
In a bipolar semiconductor device such that electrons and holes are recombined in a silicon carbide epitaxial film grown from the surface of a silicon carbide single crystal substrate at the time of on-state forward bias operation; an on-state forward voltage increased in a silicon carbide bipolar semiconductor device is recovered by shrinking the stacking fault area enlarged by on-state forward bias operation. In a method of this invention, the bipolar semiconductor device in which the stacking fault area enlarged and the on-state forward voltage has been increased by on-state forward bias operation, is heated at a temperature of higher than 350° C.