The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2018
Filed:
Jun. 19, 2014
Denso Corporation, Kariya, Aichi-pref., JP;
Central Research Institute of Electric Power Industry, Tokyo, JP;
Nuflare Technology, Inc., Yokohama, Kanagawa, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Hiroaki Fujibayashi, Kariya, JP;
Masami Naito, Kariya, JP;
Masahiko Ito, Yokosuka, JP;
Isaho Kamata, Yokosuka, JP;
Hidekazu Tsuchida, Yokosuka, JP;
Hideki Ito, Yokohama, JP;
Ayumu Adachi, Toyota, JP;
Koichi Nishikawa, Nagakute, JP;
DENSO CORPORATION, Kariya, JP;
CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY, Tokyo, JP;
NuFlare Technology, Inc., Yokohama, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota-shi, JP;
Abstract
In a silicon carbide semiconductor film forming apparatus, first to third gasses are introduced into first to third separation chambers through first to third inlets, respectively. The first and second gasses are silicon raw material including gas and carbon raw material including gas, and the third gas does not include silicon and carbon. The first and second gasses are independently supplied to growth space through first and second supply paths extending from the first and second separation chambers, respectively. The third gas is introduced through a third supply path from the third separation chamber between the first and second gasses.