The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Jul. 31, 2013
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
Central Research Institute of Electric Power Industry, Tokyo, JP;
Kazutoshi Kojima, Ibaraki, JP;
Shiyang Ji, Ibaraki, JP;
Tetsuya Miyazawa, Kanagawa, JP;
Hidekazu Tsuchida, Kanagawa, JP;
Koji Nakayama, Hyogo, JP;
Tetsuro Hemmi, Hyogo, JP;
Katsunori Asano, Hyogo, JP;
Abstract
The present invention provides a semiconductor structure which includes at least a p-type silicon carbide single crystal layer having an α-type crystal structure, containing aluminum at impurity concentration of 1×10cmor higher, and having thickness of 50 μm or greater. Further provided is a method for producing the semiconductor structure of the present invention which method includes at least epitaxial growth step of introducing silicon carbide source and aluminum source and epitaxially growing p-type silicon carbide single crystal layer over a base layer made of silicon carbide single crystal having α-type crystal structure, wherein the epitaxial growth step is performed at temperature conditions of from 1,500° C. to 1,700° C., and pressure conditions of from 5×10Pa to 25×10Pa.