The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2020
Filed:
Jan. 23, 2019
Applicant:
Denso Corporation, Kariya, JP;
Inventor:
Hideyuki Uehigashi, Kariya, JP;
Assignee:
DENSO CORPORATION, Kariya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/36 (2006.01); H01L 21/02 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/02378 (2013.01); H01L 21/324 (2013.01); H01L 29/086 (2013.01); H01L 29/0865 (2013.01); H01L 29/1095 (2013.01); H01L 29/36 (2013.01); H01L 29/4236 (2013.01); H01L 29/66734 (2013.01); H01L 29/7805 (2013.01); H01L 29/7813 (2013.01);
Abstract
A silicon carbide semiconductor substrate includes a first conductivity type substrate doped with a first conductivity type impurity to have a first conductivity type and having a specific resistance of 30 mΩcm or less. A lifetime of minority carriers in the first conductivity type substrate is set to 100 nsec or less.