The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2025

Filed:

Feb. 10, 2022
Applicant:

Denso Corporation, Kariya, JP;

Inventors:

Hiroaki Fujibayashi, Kariya, JP;

Yuya Koide, Kariya, JP;

Hirotaka Mori, Nissin, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/52 (2006.01); C23C 16/458 (2006.01); G03F 7/16 (2006.01);
U.S. Cl.
CPC ...
C23C 16/52 (2013.01); C23C 16/4584 (2013.01); G03F 7/162 (2013.01);
Abstract

An apparatus manufactures a semiconductor device. The apparatus includes a film formation device, a first detector and a second detector. The film formation device forms an embedded layer for embedding a trench disposed at a substrate in the semiconductor device. The first detector detects a state of a first region of the substrate where the trench is disposed. The second detector detects a state of a second region of the substrate, the second region disposed outside of the first region. The film formation device ends film formation of the embedded layer, based on a condition that difference between a first detection result corresponding to the state of the first region and a second detection result corresponding to the state of the second region is smaller than or equal to a threshold value.


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