The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2006
Filed:
Apr. 27, 2004
Masami Naito, Inazawa, JP;
Kazukuni Hara, Kasugai, JP;
Fusao Hirose, Obu, JP;
Shoichi Onda, Toyokawa, JP;
Masami Naito, Inazawa, JP;
Kazukuni Hara, Kasugai, JP;
Fusao Hirose, Obu, JP;
Shoichi Onda, Toyokawa, JP;
Denso Corporation, Kariya, JP;
Abstract
When a SiC substrate is heated up to around 1800°C., sublimation of SiC occurs from the SiC substrate. Moreover, temperature of the front surface of the SiC substrate is lower than that of the back surface of the SiC substrate. Therefore, sublimation gas sublimed from a back-surface vicinity of the substrate, where temperature is high, moves to a front-surface vicinity of the substrate, where temperature is low, through the hollow micro-pipe defect. Epitaxial growth proceeds on the front surface of the substrate while the sublimation gas is recrystallized at the front-surface vicinity of the substrate, so that the micro-pipe defect is occluded.