Denso Corporation

Nuflare Technology, Inc.

Central Research Institute of Electric Power Industry

Toyota Jidosha Kabushiki Kaisha

Showa Denko K.k.

Nippondenso Co., Ltd.

Kabushiki Kaisha Toyota Chuo Kenkyusho

Denson Corporation

Masami Naito

Hiroaki Fujibayashi

Hidekazu Tsuchida

Masahiko Ito

Isaho Kamata

Hideki Ito

Kazukuni Hara

Koichi Nishikawa

Ayumu Adachi

Kunihiko Suzuki

Rajesh Kumar

Hideyuki Uehigashi

Keisuke Fukada

Hirofumi Aoki

Tsuyoshi Yamamoto

Katsumi Suzuki

Yuichi Takeuchi

Tsunenobu Kimoto

Mitsuhiro Kataoka

Hiroyuki Matsunami

Shoichi Onda

Takahiro Kozawa

Yuuichi Takeuchi

Fusao Hirose

Naohisa Ikeya

Nobuyuki Ooya

Kunihiko Hara

Hiroki Nakamura

Hiroyuki Kondo

Takeshi Fukazawa

Daisuke Nakamura

Yasuo Kitou

Tomoo Morino

Hiroki Watanabe

Naoto Ishibashi

Akira Bando

Tadashi Ito

Toshiro Tsumori

Toshikazu Sugiura

A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 &#x3bc;m/h or more from an initial growth stage.

SiC epitaxial wafer and method for producing same

A supply part includes a first partition, a second partition under the first partition, a third partition under the second partition, a first flow path between the first partition and the second partition allowing a first gas to be introduced therein, a second flow path between the second partition and the third partition allowing a second gas to be introduced therein, a first piping extending from the second partition to reach below the third partition and being communicated with the first flow path, a second piping extending from the third partition to reach below the third partition and being communicated with the second flow path, and a convex portion provided on an outer circumferential surface of the first piping or an inner circumferential surface of the second piping protruding from one of the outer circumferential surface and the inner circumferential surface toward the other one.

Film forming apparatus

A film forming apparatus according to an embodiment of the invention includes: a film forming chamber configured to form a film on a substrate; a susceptor configured to place the substrate thereon; a rotating part configured to rotate the susceptor; a heater configured to heat the substrate; and a gas supplier configured to supply process gases into the film forming chamber, wherein the susceptor includes: a ring-shaped outer circumferential susceptor supported by the rotating part; a holder provided at an inner circumferential portion of the outer circumferential susceptor, the holder configured to hold the substrate; a ring-shaped plate provided over the outer circumferential susceptor; and a cover member configured to cover a top surface and an outer circumferential surface of the plate and an outer circumferential surface of the outer circumferential susceptor.

Film forming apparatus, susceptor, and film forming method

A method for manufacturing a SiC epitaxial wafer according to one aspect of the present invention includes separately introducing, into a reaction space for SiC epitaxial growth, a basic N-based gas composed of molecules containing an N atom within the molecular structure but having neither a double bond nor a triple bond between nitrogen atoms, and a Cl-based gas composed of molecules containing a Cl atom within the molecular structure, and mixing the N-based gas and the Cl-based gas at a temperature equal to or higher than the boiling point or sublimation temperature of a solid product generated by mixing the N-based gas and the Cl-based gas.

Method for manufacturing SiC epitaxial wafer by simultaneously utilizing an N-based gas and a CI-based gas, and SiC epitaxial growth apparatus

In a silicon carbide semiconductor film forming apparatus, first to third gasses are introduced into first to third separation chambers through first to third inlets, respectively. The first and second gasses are silicon raw material including gas and carbon raw material including gas, and the third gas does not include silicon and carbon. The first and second gasses are independently supplied to growth space through first and second supply paths extending from the first and second separation chambers, respectively. The third gas is introduced through a third supply path from the third separation chamber between the first and second gasses.

Silicon carbide semiconductor film-forming apparatus and film-forming method using the same

It is an object of the present invention to provide a film-forming apparatus and a film-forming method that can prolong the lifetime of heaters used under high temperature conditions in an epitaxial growth technique. An inert gas discharge portion supplies an inert gas into the space containing the heater, gas is then discharged through the gas discharge portion without influence on the semiconductor substrate during film formation. It is therefore possible to prevent the reaction gas entering into the space containing the high-temperature heaters. This makes it possible to prevent a reaction between hydrogen gas contained in the reaction gas and SiC constituting the heaters. Therefore, it is possible to prevent carbon used as a base material of the heaters from being exposed due to the decomposition of SiC and then reacting with hydrogen gas. This makes it possible to prolong the lifetime of the heaters.

Film-forming manufacturing apparatus and method

A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas into, a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process, a main-heater for heating a substrate placed inside the liner, from the bottom side, a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side, wherein the main-heater and the sub-heater cluster are resistive heaters, wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater, wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at a lower output than the first sub-heater, wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled.

Film-forming apparatus and film-forming method

At the time of transporting a substrate into or from a space where a film formation process is performed, the space where the film formation process is performed, a space where a lower heateris provided, and a space where an upper heateris provided are made in an inert gas atmosphere.

Film formation apparatus and film formation method

A film formation apparatus according to an embodiment includes: a film formation chamber performing film formation on a substrate; a cylindrical liner provided inside of a sidewall of the film formation chamber; a process-gas supply unit provided at a top of the film formation chamber and having a first gas ejection hole supplying a process gas to inside of the liner; a first heater provided outside the liner in the film formation chamber and heating the substrate from above; a second heater heating the substrate from below; and a shielding gas supply unit having a plurality of second gas ejection holes supplying a shielding gas to a position closer to a sidewall of the film formation chamber than a position of the first gas ejection hole.

A silicon carbide semiconductor device includes a junction barrier Schottky diode including a substrate, a drift layer, an insulating film, a Schottky barrier diode, and a plurality of second conductivity type layers. The Schottky barrier diode includes a Schottky electrode and an ohmic electrode. A PN diode is configured by the plurality of second conductivity type layers and the drift layer, and the plurality of second conductivity type layers is formed in stripes only in a direction parallel to a rod-shaped stacking fault.

Silicon carbide semiconductor device having junction barrier Schottky diode

In a method of manufacturing a silicon carbide single crystal, a silicon carbide substrate having a surface of one of a (-) plane and a (-) plane, where n is any integer number greater than or equal to 0, is prepared. An epitaxial layer having a predetermined impurity concentration is grown on the one of the (-) plane and the (-) plane of the silicon carbide substrate by a chemical vapor deposition method so that a threading dislocation is discharged from a side surface of the epitaxial layer. A silicon carbide single crystal is grown into a bulk shape by a sublimation method on the one of the (-) plane and the (-) plane of the epitaxial layer from which the threading dislocation is discharged.

Method of manufacturing silicon carbide single crystal

A compound semiconductor substrate includes a first substrate and a second substrate made of single crystal gallium nitride. In each of the first substrate and the second substrate, one surface is a (0001) Ga-face and an opposite surface is a (000-1) N-face. The first substrate and the second substrate are bonded to each other in a state where the (000-1) N-face of the first substrate and the (000-1) N-face of the second substrate face each other, and the (0001) Ga-face of the first substrate and the (0001) Ga-face of the second substrate are exposed.

Stacked single crystal compound semiconductor substrates

A compound semiconductor substrate includes a first substrate and a second substrate made of single crystal silicon carbide. In each of the first substrate and the second substrate, one surface is a (000-1) C-face and an opposite surface is a (0001) Si-face. The first substrate and the second substrate are bonded to each other in a state where the (0001) Si-face of the first substrate and the (0001) Si-face of the second substrate face each other, and the (000-1) C-face of the first substrate and the (000-1) C-face of the second substrate are exposed.

Single crystal compound semiconductor substrate

A silicon carbide (SiC) substrate is provided with an off-oriented {0001} surface whose off-axis direction is &#x3c;11-20&#x3e;. A trench is formed on the SiC to have a stripe structure extending toward a &#x3c;11-20&#x3e; direction. An SiC epitaxial layer is formed on an inside surface of the trench.

Silicon carbide semiconductor device

When a SiC substrate is heated up to around 1800&#xb0;C., sublimation of SiC occurs from the SiC substrate. Moreover, temperature of the front surface of the SiC substrate is lower than that of the back surface of the SiC substrate. Therefore, sublimation gas sublimed from a back-surface vicinity of the substrate, where temperature is high, moves to a front-surface vicinity of the substrate, where temperature is low, through the hollow micro-pipe defect. Epitaxial growth proceeds on the front surface of the substrate while the sublimation gas is recrystallized at the front-surface vicinity of the substrate, so that the micro-pipe defect is occluded.

Manufacturing method of silicon carbide single crystals

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Inazawa, Japan

Masami Naito