Akira Bando

Title: Akira Bando: Innovator in Semiconductor Technology

Introduction

Akira Bando is a prominent inventor based in Ichihara, Japan, known for his significant contributions to semiconductor technology. With a total of three patents to his name, Bando has made strides in the development of advanced materials and methods for producing semiconductor devices.

Latest Patents

One of Bando's latest patents is for a SiC epitaxial wafer and the method for producing it. This method involves an epitaxial growth step where an Si-based raw material gas, a C-based raw material gas, and a gas containing a Cl element are fed to the surface of a SiC single crystal substrate. The growth conditions are meticulously controlled, with a film deposition pressure of 30 torr or less, a Cl/Si ratio ranging from 8 to 12, a C/Si ratio between 0.8 and 1.2, and a growth rate of 50 µm/h or more from the initial growth stage. Another notable patent is for an AlGaN substrate and its production method. This substrate, formed of AlGaN, is utilized in the fabrication of Group III nitride semiconductor devices. The production method employs the MOCVD technique, ensuring a raw material molar ratio of a Group V element to Group III element that is 1000 or less, with a temperature exceeding 1200°C for layer formation.

Career Highlights

Throughout his career, Akira Bando has worked with notable companies such as Showa Denko K.K. and the Central Research Institute of Electric Power Industry. His work in these organizations has contributed to advancements in semiconductor technology and materials science.

Collaborations

Bando has collaborated with esteemed colleagues, including Hiroshi Amano and Keisuke Fukada. These partnerships have fostered innovation and development in the field of semiconductor research.

Conclusion

Akira Bando's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence advancements in the production of semiconductor devices.