Naoto Ishibashi

Title: Naoto Ishibashi: Innovator in SiC Epitaxial Wafer Technology

Introduction

Naoto Ishibashi is a prominent inventor based in Chichibu, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of silicon carbide (SiC) epitaxial wafers. With a total of six patents to his name, Ishibashi's work has advanced the manufacturing processes and applications of these critical materials.

Latest Patents

Ishibashi's latest patents focus on the SiC epitaxial wafer and the method for manufacturing it. One of his notable inventions includes a SiC epitaxial wafer that features a SiC single crystal substrate. This wafer incorporates a high concentration layer with an average n-type doping concentration of 1×10/cm³ or more and 1×10/cm³ or less, ensuring in-plane uniformity of the doping concentration of 30% or less. This innovation enhances the performance and reliability of semiconductor devices.

Career Highlights

Throughout his career, Naoto Ishibashi has worked with leading companies in the semiconductor industry. He has been associated with Showa Denko K.K. and Resonac Corporation, where he has contributed to various projects and advancements in semiconductor technology. His expertise in SiC materials has positioned him as a key figure in this specialized field.

Collaborations

Ishibashi has collaborated with notable professionals in the industry, including Keisuke Fukada and Hironori Atsumi. These collaborations have fostered innovation and have led to the successful development of new technologies in semiconductor manufacturing.

Conclusion

Naoto Ishibashi's contributions to the field of SiC epitaxial wafers have made a significant impact on semiconductor technology. His innovative patents and collaborations with industry leaders highlight his role as a key inventor in this domain. His work continues to influence advancements in the manufacturing and application of semiconductor materials.