Showa Denko K.k.

Resonac Corporation

Denso Corporation

Central Research Institute of Electric Power Industry

Naoto Ishibashi

Keisuke Fukada

Hidekazu Tsuchida

Hironori Atsumi

Katsumi Suzuki

Koichi Murata

Masahiko Ito

Isaho Kamata

Kazukuni Hara

Masami Naito

Hiroaki Fujibayashi

Hideyuki Uehigashi

Tomoya Utashiro

Akira Bando

Hirofumi Aoki

Akira Bandoh

Toshikazu Sugiura

Jia Yu

A method of producing a p-type SiC epitaxial wafer, the method including: a step of setting an input raw material C/Si ratio, being a ratio between the C element and the Si element in a feedstock gas; and a step of obtaining a p-type SiC epitaxial wafer having an Al dopant concentration of at least 1×10cmby forming a p-type SiC epitaxial film on a substrate in a film-forming atmosphere comprising the feedstock gas, a Cl-based gas containing Cl in the molecule, and a dopant gas containing Al and C in the molecule, wherein the input raw material C/Si ratio is set based on a total gas C/Si ratio, being a ratio between the C element and the Si element in the film-forming atmosphere containing the C element included in the dopant gas, the input raw material C/Si ratio differs from the total gas C/Si ratio, and the input raw material C/Si ratio is 0.8 or less.

P-type SiC epitaxial wafer and production method therefor

A SiC epitaxial wafer of the present invention includes a SiC single crystal substrate, and a high concentration layer that is provided on the SiC single crystal substrate and has an average value of an n-type doping concentration of 1×10/cmor more and 1×10/cmor less, and in-plane uniformity of the doping concentration of 30% or less.

SiC epitaxial wafer and method for manufacturing SiC epitaxial wafer

SiC epitaxial wafer and method for manufacturing SIC epitaxial wafer

A SiC epitaxial wafer according to an embodiment includes: a SiC substrate; and a SiC epitaxial layer formed on a first surface of the SiC substrate. The in-plane uniformity of a density of Zcenters of the SiC epitaxial layer is 5% or less.

SiC epitaxial wafer and method for producing SiC epitaxial wafer

A wafer supporting mechanism including: a wafer supporting table; and a movable part supported by the wafer supporting table, wherein the wafer supporting table includes a wafer supporting portion for transfer that stands up from a first surface opposing a back surface of a wafer to be placed and is provided further toward an inner side than an outer peripheral edge of the wafer to be placed, and the movable part includes a wafer supporting portion for film formation that is positioned further toward an outer peripheral side of the wafer to be placed than the wafer supporting portion for transfer and is relatively movable with respect to the wafer supporting table in a standing direction of the wafer supporting portion for transfer.

Wafer supporting mechanism, chemical vapor deposition apparatus, and epitaxial wafer manufacturing method

According to an aspect of the present invention, there is provided a deposition apparatus including: a reaction space which is a reaction chamber; a front chamber for deposition; a raw material supply port that is configured to supply a raw material to the reaction space; an opening for measuring a temperature of a wafer mounted on a wafer mounting surface of a mounting stage disposed in the reaction space; and a partition plate that partitions the reaction space and the front chamber for deposition, in which the raw material supply port is positioned on the same plane as the partition plate or on the reaction space side from the partition plate, and the opening is positioned in the front chamber for deposition side from the partition plate.

Deposition apparatus having particular arrangement of raw material supply port, partition plate, and opening for measuring a temperature

A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 &#x3bc;m/h or more from an initial growth stage.

SiC epitaxial wafer and method for producing same

Growing community of inventors

Chichibu, Japan

Naoto Ishibashi