The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Apr. 25, 2024
Applicant:
Resonac Corporation, Tokyo, JP;
Inventors:
Naoto Ishibashi, Chichibu, JP;
Keisuke Fukada, Chichibu, JP;
Assignee:
Resonac Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/60 (2025.01); C30B 25/14 (2006.01); C30B 25/16 (2006.01); C30B 29/36 (2006.01); H01L 21/02 (2006.01); H10D 62/832 (2025.01);
U.S. Cl.
CPC ...
H10D 62/605 (2025.01); C30B 25/14 (2013.01); C30B 25/165 (2013.01); C30B 29/36 (2013.01); H01L 21/02378 (2013.01); H01L 21/02529 (2013.01); H01L 21/02584 (2013.01); H01L 21/0262 (2013.01); H10D 62/8325 (2025.01);
Abstract
A SiC epitaxial wafer of the present invention includes a SiC single crystal substrate, and a high concentration layer that is provided on the SiC single crystal substrate and has an average value of an n-type doping concentration of 1×10/cmor more and 1×10/cmor less, and in-plane uniformity of the doping concentration of 30% or less.