The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2023
Filed:
Nov. 24, 2021
Applicant:
Showa Denko K.k., Tokyo, JP;
Inventors:
Assignee:
SHOWA DENKO K.K., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/66 (2006.01); C23C 16/32 (2006.01);
U.S. Cl.
CPC ...
H01L 22/20 (2013.01); C23C 16/325 (2013.01); H01L 21/02529 (2013.01); H01L 21/02634 (2013.01); H01L 21/02664 (2013.01); H01L 21/02378 (2013.01);
Abstract
A SiC epitaxial wafer according to an embodiment includes: a SiC substrate; and a SiC epitaxial layer formed on a first surface of the SiC substrate. The in-plane uniformity of a density of Zcenters of the SiC epitaxial layer is 5% or less.