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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10181517 B1

PDFFull Text
Date of Patent:
Jan. 15, 2019

Filed:

Aug. 25, 2016

Silicon carbide single crystal, silicon carbide single crystal wafer, silicon carbide single crystal epitaxial wafer, and electronic device

Applicant:

Denso Corporation, Kariya, Aichi-pref., JP;

Inventors:

Takeshi Okamoto, Kariya, JP;

Hiroyuki Kondo, Kariya, JP;

Takashi Kanemura, Kariya, JP;

Shinichiro Miyahara, Kariya, JP;

Yasuhiro Ebihara, Kariya, JP;

Shoichi Onda, Kariya, JP;

Hidekazu Tsuchida, Yokosuka, JP;

Isaho Kamata, Yokosuka, JP;

Ryohei Tanuma, Yokosuka, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:

Posz Law Group, PLC

Primary Examiner:

Eric A Ward

Int. Cl.
CPC ...
C23C 16/32 (2006.01); C30B 29/36 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 29/32 (2006.01); H01L 29/66 (2006.01); H01L 29/94 (2006.01); C30B 25/18 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); C30B 29/36 (2013.01); H01L 21/02378 (2013.01); H01L 21/02433 (2013.01); H01L 21/02529 (2013.01); H01L 21/02609 (2013.01); H01L 21/02634 (2013.01); H01L 29/045 (2013.01); H01L 29/32 (2013.01); H01L 29/6606 (2013.01); H01L 29/94 (2013.01); C30B 25/18 (2013.01);
Abstract

A silicon carbide single crystal includes: threading dislocations each of which having a dislocation line extending through a C-plane, and a Burgers vector including at least a component in a C-axis direction. In addition, a density of the threading dislocations having angles, each of which is formed by an orientation of the Burgers vector and an orientation of the dislocation line, larger than 0° and within 40° is set to 300 dislocations/cmor less. Furthermore, a density of the threading dislocations having the angles larger than 40° is set to 30 dislocations/cmor less.

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