Shinichiro Miyahara

This inventor holds 21 USPTO granted patents and 1 published patent application, primarily in Silicon Carbide Semiconductors. Top assignees: Toyota Jidosha Kabushiki Kaisha, Denso Corporation. Active years: 2012-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shinichiro Miyahara. Retrieved from https://idiyas.com/inventor/shinichiro-miyahara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 21 (Patent Applications = 1)

% Patents Active = 85.7

Average Co-Inventor Count = 4.2

ph-index = 3

Forward Citations = 52(Granted Patents)

Location History:

Nisshin, JP (2012 - 2015)
Nagoya, JP (2015 - 2018)
Kariya, JP (2018 - 2020)

Company Filing History:

17 out of 38,912

Toyota Jidosha Kabushiki Kaisha

where one patent can have more than one assignee

Years Active: 2012-2026

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Areas of Expertise:

Silicon Carbide

Semiconductor Device

Epitaxial Wafer

Schottky Barrier Diode

Insulated Gate Bipolar Transistor

Trench Gate

On/Off Resistance

Manufacturing Method

Single Crystal

Conductivity-Type Impurity

Electronic Device

21 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12648174 - Semiconductor device (2026-06-02),

2. 12532503 - Silicon carbide semiconductor device (2026-01-20),

3. 12432989 - Semiconductor device and method for manufacturing the same (2025-09-30),

4. 10784335 - Silicon carbide semiconductor device and manufacturing method therefor (2020-09-22),

5. 10181517 - Silicon carbide single crystal, silicon carbide single crystal wafer, silicon carbide single crystal epitaxial wafer, and electronic device (2019-01-15),

6. 10153350 - Semiconductor device (2018-12-11),

7. 10068972 - Semiconductor device with opposite conductivity-type impurity regions between source and trench gate for reducing leakage (2018-09-04),

8. 9972674 - Schottky barrier diode and manufacturing method thereof (2018-05-15),

9. 9941366 - Semiconductor device and manufacturing method of semiconductor device (2018-04-10),

10. 9905686 - Insulated gate bipolar transistor with improved on/off resistance (2018-02-27),

11. 9847414 - Semiconductor device and method for manufacturing semiconductor device having a step provided in a lateral surface of a trench formed in a surface of a semiconductor substrate (2017-12-19),

12. 9793376 - Silicon carbide semiconductor device and method of manufacturing the same (2017-10-17),

13. 9698017 - Manufacturing method of semiconductor device (2017-07-04),

14. 9633901 - Method for manufacturing semiconductor device (2017-04-25),

15. 9136372 - Silicon carbide semiconductor device (2015-09-15),

Title: Shinichiro Miyahara - Pioneering Inventor from Nagoya

Introduction: Shinichiro Miyahara is a renowned inventor hailing from Nagoya, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Miyahara holds several patents in the areas of robotics, artificial intelligence, and sustainable energy solutions, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Miyahara has worked with leading tech companies in Japan, spearheading research and development projects that have led to significant advancements in various industries.

Collaborations: Throughout his career, Miyahara has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge exchange.

Conclusion: Shinichiro Miyahara's dedication to pushing the boundaries of technology and his passion for creating solutions that make a difference have solidified his reputation as a visionary inventor in Nagoya and beyond.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

1 patent pending: