The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Jun. 25, 2012
Shinichiro Miyahara, Nisshin, JP;
Masahiro Sugimoto, Toyota, JP;
Hidefumi Takaya, Miyoshi, JP;
Yukihiko Watanabe, Nagoya, JP;
Narumasa Soejima, Seto, JP;
Tsuyoshi Ishikawa, Nisshin, JP;
Shinichiro Miyahara, Nisshin, JP;
Masahiro Sugimoto, Toyota, JP;
Hidefumi Takaya, Miyoshi, JP;
Yukihiko Watanabe, Nagoya, JP;
Narumasa Soejima, Seto, JP;
Tsuyoshi Ishikawa, Nisshin, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota-shi, JP;
Abstract
In a silicon carbide semiconductor device, a plurality of trenches has a longitudinal direction in one direction and is arranged in a stripe pattern. Each of the trenches has first and second sidewalls extending in the longitudinal direction. The first sidewall is at a first acute angle to one of a (11-20) plane and a (1-100) plane, the second sidewall is at a second acute angle to the one of the (11-20) plane and the (1-100) plane, and the first acute angle is smaller than the second acute angle. A first conductivity type region is in contact with only the first sidewall in the first and second sidewalls of each of the trenches, and a current path is formed on only the first sidewall in the first and second sidewalls.