Company Filing History:

11 out of 36,499

Toyota Jidosha Kabushiki Kaisha

Kabushiki Kaisha Toyota Chuo Kenkyusho

patents

where one patent can have more than one assignee

Years Active: 2013-2017

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13 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9779906 - Electron emission device and transistor provided with the same (2017-10-03),

2. 9276075 - Semiconductor device having vertical MOSFET structure that utilizes a trench-type gate electrode and method of producing the same (2016-03-01),

3. 9136372 - Silicon carbide semiconductor device (2015-09-15),

4. 8975139 - Manufacturing method of silicon carbide semiconductor device (2015-03-10),

5. 8952430 - Semiconductor device and method for manufacturing semiconductor device (2015-02-10),

6. 8710586 - SIC semiconductor device and method for manufacturing the same (2014-04-29),

7. 8618555 - Silicon carbide semiconductor device and method of manufacturing the same (2013-12-31),

8. 8575689 - Silicon carbide semiconductor device and manufacturing method of the same (2013-11-05),

9. 8525223 - Silicon carbide semiconductor device (2013-09-03),

10. 8518809 - Manufacturing method of silicon carbide single crystal (2013-08-27),

11. 8492867 - Semiconductor device including cell region and peripheral region having high breakdown voltage structure (2013-07-23),

12. 8470672 - Method of manufacturing silicon carbide semiconductor device (2013-06-25),

13. 8436365 - SiC semiconductor device having Schottky barrier diode and method for manufacturing the same (2013-05-07),

Sure, here is the article about inventor Tsuyoshi Ishikawa:

Title: Tsuyoshi Ishikawa: Pioneering Inventor in Semiconductor Technologies

Introduction:

Tsuyoshi Ishikawa, a prolific inventor hailing from Nisshin, Japan, has made significant contributions to the field of semiconductor devices with a total of 13 patents to his name. His innovative work has revolutionized electron emission devices and transistor structures.

Latest Patents:

1. Electron emission device and transistor provided with the same: Ishikawa's groundbreaking patent involves an electron emission device with a unique electron emission layer that emits electrons when irradiated with light.

2. Semiconductor device having vertical MOSFET structure: This patent showcases a semiconductor device with a vertical MOSFET structure utilizing a trench-type gate electrode, improving the efficiency of semiconductor devices.

Career Highlights:

Tsuyoshi Ishikawa has lent his expertise to renowned companies such as Toyota Jidosha Kabushiki Kaisha and Denso Corporation, where his innovative spirit and technical acumen have propelled advancements in semiconductor technologies.

Collaborations:

Throughout his career, Ishikawa has collaborated with esteemed professionals in the industry, including coworkers Yukihiko Watanabe and Hidefumi Takaya. Together, they have worked on cutting-edge projects that have shaped the landscape of semiconductor innovations.

Conclusion:

Inventor Tsuyoshi Ishikawa stands as a pioneering figure in the world of semiconductor technologies, with a remarkable portfolio of patents reflecting his dedication to pushing the boundaries of technological advancement. His collaborative efforts and groundbreaking inventions continue to inspire future generations of innovators in the field.

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Inventor’s Patent Attorneys refers to legal professionals with specialized expertise in representing inventors throughout the patent process. These attorneys assist inventors in navigating the complexities of patent law, including filing patent applications, conducting patent searches, and protecting intellectual property rights. They play a crucial role in helping inventors secure patents for their innovative creations.