The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2013
Filed:
May. 27, 2011
Naohiro Suzuki, Anjo, JP;
Hideo Matsuki, Obu, JP;
Masahiro Sugimoto, Toyota, JP;
Hidefumi Takaya, Miyoshi, JP;
Jun Morimoto, Nisshin, JP;
Tsuyoshi Ishikawa, Nisshin, JP;
Narumasa Soejima, Seto, JP;
Yukihiko Watanabe, Nagoya, JP;
Naohiro Suzuki, Anjo, JP;
Hideo Matsuki, Obu, JP;
Masahiro Sugimoto, Toyota, JP;
Hidefumi Takaya, Miyoshi, JP;
Jun Morimoto, Nisshin, JP;
Tsuyoshi Ishikawa, Nisshin, JP;
Narumasa Soejima, Seto, JP;
Yukihiko Watanabe, Nagoya, JP;
DENSO CORPORATION, Kariya, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota, JP;
Abstract
The silicon carbide semiconductor device includes a substrate, a drift layer, a base region, a source region, a trench, a gate insulating layer, a gate electrode, a source electrode, a drain electrode, and a deep layer. The deep layer is disposed under the base region and is located to a depth deeper than the trench. The deep layer is divided into a plurality of portions in a direction that crosses a longitudinal direction of the trench. The portions include a group of portions disposed at positions corresponding to the trench and arranged at equal intervals in the longitudinal direction of the trench. The group of portions surrounds corners of a bottom of the trench.