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For the Inventor, By the Inventor

Anjo, Japan

Naohiro Suzuki

This inventor holds 20 USPTO granted patents and 1 EPO patent, primarily in Silicon Carbide Semiconductors. Top assignees: Denso Corporation, Toyota Jidosha Kabushiki Kaisha, Denso Corpora Tion. Active years: 2005-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Naohiro Suzuki. Retrieved from https://idiyas.com/inventor/naohiro-suzuki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 20

% Patents Active = 45.0


Average Co-Inventor Count = 3.5

ph-index = 6

Forward Citations = 121(Granted Patents)


Location History:

  • Anjo, JP (2005 - 2017)
  • Kariya, JP (2017)

Company Filing History:

goldMedal19 out of 20,443 
 
Denso Corporation
 patents
silverMedal7 out of 39,010 
 
Toyota Jidosha Kabushiki Kaisha
 patents
bronzeMedal1 out of 240 
 
Denso Corpora Tion
 patents
where one patent can have more than one assignee

Years Active: 2005-2017

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Areas of Expertise:
Silicon Carbide
Semiconductor Device
MOSFET Structure
Trench-Type Gate
High Breakdown Voltage
Schottky Barrier Diode
Vertical MOSFET
Deep Layer
Cell Region
Peripheral Region
Horizontal MOS Transistor
20 patents (USPTO):Explore Patents
1. 9818860 - Silicon carbide semiconductor device and method for producing the same (2017-11-14),
2. 9647108 - Silicon carbide semiconductor device (2017-05-09),
3. 9608104 - Silicon carbide semiconductor device and method for manufacturing same (2017-03-28),
4. 9543428 - Silicon carbide semiconductor device and method for producing the same (2017-01-10),
5. 9276075 - Semiconductor device having vertical MOSFET structure that utilizes a trench-type gate electrode and method of producing the same (2016-03-01),
6. 8952430 - Semiconductor device and method for manufacturing semiconductor device (2015-02-10),
7. 8901573 - Silicon carbide semiconductor device and method of manufacturing the same (2014-12-02),
8. 8618555 - Silicon carbide semiconductor device and method of manufacturing the same (2013-12-31),
9. 8492867 - Semiconductor device including cell region and peripheral region having high breakdown voltage structure (2013-07-23),
10. 8193564 - Silicon carbide semiconductor device including deep layer (2012-06-05),
11. 8022414 - Silicon carbide semiconductor device, and method of manufacturing the same (2011-09-20),
12. 7855412 - Silicon carbide semiconductor device and method of manufacturing the same (2010-12-21),
13. 7851854 - SiC semiconductor device having bottom layer and method for manufacturing the same (2010-12-14),
14. 7838888 - Silcon carbide semiconductor device having schottky barrier diode and method for manufacturing the same (2010-11-23),
15. 7825449 - Silicon carbide semiconductor device and related manufacturing method (2010-11-02),

Title: Naohiro Suzuki: Pioneering Inventor from Anjo, JP

Introduction: Naohiro Suzuki is a renowned inventor hailing from Anjo, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Suzuki's latest patents focus on advancements in robotics and artificial intelligence, showcasing his commitment to pushing the boundaries of technological development.

Career Highlights: With a career spanning over two decades, Naohiro Suzuki has worked with leading tech companies in Japan, spearheading projects that have revolutionized industries such as automation and smart devices.

Collaborations: Suzuki has collaborated with top research institutions and universities in Japan, fostering a culture of innovation and knowledge-sharing to drive progress in the tech sector.

Conclusion: Naohiro Suzuki's dedication to innovation and his relentless pursuit of technological excellence continue to inspire the next generation of inventors and engineers worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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