The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Aug. 08, 2012
Yuichi Takeuchi, Obu, JP;
Naohiro Suzuki, Anjo, JP;
Yuichi Takeuchi, Obu, JP;
Naohiro Suzuki, Anjo, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A semiconductor device includes a silicon carbide semiconductor substrate, a transistor formed in a cell region of the semiconductor substrate, and a voltage-breakdown-resistant structure formed in a region which surrounds an outer periphery of the cell region. The semiconductor substrate includes a first conductivity type substrate, a first conductivity type drift layer on the first conductivity type substrate, a second conductivity type layer on the drift layer, and a first conductivity type layer on the second conductivity type layer. The voltage-breakdown-resistant structure includes a first recess which surrounds the outer periphery of the cell region and reaches the drift layer, a trench located at a side surface of the recess on an inner periphery of the recess, and a second conductivity type buried layer buried in the trench to provide the side surface of the first recess.