The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Oct. 17, 2012
Hidefumi Takaya, Miyoshi, JP;
Hideo Matsuki, Obu, JP;
Naohiro Suzuki, Anjo, JP;
Tsuyoshi Ishikawa, Nisshin, JP;
Narumasa Soejima, Seto, JP;
Yukihiko Watanabe, Nagoya, JP;
Hidefumi Takaya, Miyoshi, JP;
Hideo Matsuki, Obu, JP;
Naohiro Suzuki, Anjo, JP;
Tsuyoshi Ishikawa, Nisshin, JP;
Narumasa Soejima, Seto, JP;
Yukihiko Watanabe, Nagoya, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A semiconductor device has a semiconductor substrate including a body region, a drift region, a trench that extends from a surface of the semiconductor substrate into the drift region through the body region, and a source region located adjacent to the trench in a range exposed to the surface of the semiconductor substrate, the source region being isolated from the drift region by the body region. A specific layer is disposed on a bottom of the trench, and it has a characteristic of forming a depletion layer at a junction between the specific layer and the drift region. An insulating layer covers an upper surface of the specific layer and a sidewall of the trench. A conductive portion is formed on a part of the side wall of the trench. The conductive portion is joined to the specific layer, and reaches the surface of the semiconductor substrate.