The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2017
Filed:
Nov. 30, 2016
Denso Corporation, Kariya, Aichi-pref., JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Masahiro Sugimoto, Toyota-shi, Aichi-ken, JP;
Hidefumi Takaya, Toyota-shi, Aichi-ken, JP;
Akitaka Soeno, Toyota-shi, Aichi-ken, JP;
Jun Morimoto, Toyota-shi, Aichi-ken, JP;
Yuichi Takeuchi, Obu, JP;
Naohiro Suzuki, Anjo, JP;
Masahiro Sugimoto, Toyota, JP;
Hidefumi Takaya, Miyoshi, JP;
Akitaka Soeno, Toyota, JP;
Jun Morimoto, Nisshin, JP;
Narumasa Soejima, Seto, JP;
Yukihiko Watanabe, Nagoya, JP;
DENSO CORPORATION, Kariya, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota-shi, JP;
Abstract
An SiC semiconductor device has a p type region including a low concentration region and a high concentration region filled in a trench formed in a cell region. A p type column is provided by the low concentration region, and a ptype deep layer is provided by the high concentration region. Thus, since a SJ structure can be made by the p type column and the n type column provided by the n type drift layer, an on-state resistance can be reduced. As a drain potential can be blocked by the ptype deep layer, at turnoff, an electric field applied to the gate insulation film can be alleviated and thus breakage of the gate insulation film can be restricted. Therefore, the SiC semiconductor device can realize the reduction of the on-state resistance and the restriction of breakage of the gate insulation film.