The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2015
Filed:
Jun. 02, 2011
Hidefumi Takaya, Toyota, JP;
Hideo Matsuki, Obu, JP;
Naohiro Suzuki, Anjo, JP;
Tsuyoshi Ishikawa, Nisshin, JP;
Hidefumi Takaya, Toyota, JP;
Hideo Matsuki, Obu, JP;
Naohiro Suzuki, Anjo, JP;
Tsuyoshi Ishikawa, Nisshin, JP;
Denso Corporation, Kariya-Shi, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-Shi, JP;
Abstract
The present application relates to technology for improving a withstand voltage of a semiconductor device. The semiconductor device includes a termination area that surrounds a cell area. The cell area is provided with a plurality of main trenches. The termination area is provided with one or more termination trenches surrounding the cell area. A termination trench is disposed at an innermost circumference of one or more termination trenches. A body region is disposed on a surface of a drift region. Each main trench reaches the drift region. A gate electrode is provided within each main trench. The termination trench reaches the drift region. Sidewalls and a bottom surface of the termination trench are covered with a insulating layer. A surface of the insulating layer covering the bottom surface of the termination trench is covered with a buried electrode. A gate potential is applied to the buried electrode.