The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Mar. 19, 2008
Applicants:
Naohiro Suzuki, Anjo, JP;
Tsuyoshi Yamamoto, Kariya, JP;
Inventors:
Naohiro Suzuki, Anjo, JP;
Tsuyoshi Yamamoto, Kariya, JP;
Assignee:
DENSO CORPORATION, Kariya, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0312 (2006.01);
U.S. Cl.
CPC ...
Abstract
The silicon carbide semiconductor device includes a trench formed from a surface of a drift layer of a first conductivity type formed on a substrate of the first conductivity type, and a deep layer of a second conductivity type located at a position in the drift layer beneath the bottom portion of the trench. The deep layer is formed at a certain distance from base regions of the second conductivity type formed on the drift layer so as to have a width wider than the width of the bottom portion of the trench, and surround both the corner portions of the bottom portion of the trench.