The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2010
Filed:
Oct. 30, 2008
Naohiro Suzuki, Anjo, JP;
Yuuichi Takeuchi, Oobu, JP;
Takeshi Endo, Oobu, JP;
Eiichi Okuno, Mizuho, JP;
Toshimasa Yamamoto, Ichinomiya, JP;
Naohiro Suzuki, Anjo, JP;
Yuuichi Takeuchi, Oobu, JP;
Takeshi Endo, Oobu, JP;
Eiichi Okuno, Mizuho, JP;
Toshimasa Yamamoto, Ichinomiya, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
An SiC semiconductor device and a related manufacturing method are disclosed having a structure provided with a p-type deep layer formed in a depth equal to or greater than that of a trench to cause a depletion layer between at a PN junction between the p-type deep layer and an n-type drift layer to extend into the n-type drift layer in a remarkable length, making it difficult for a high voltage, resulting from an adverse affect arising from a drain voltage, to enter a gate oxide film. This results in a capability of minimizing an electric field concentration in the gate oxide film, i.e., an electric field concentration occurring at the gate oxide film at a bottom wall of the trench.