The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2013
Filed:
Feb. 21, 2011
Takeo Yamamoto, Obu, JP;
Takeshi Endo, Toyota, JP;
Jun Morimoto, Nisshin, JP;
Hirokazu Fujiwara, Miyoshi, JP;
Yukihiko Watanabe, Nagoya, JP;
Takashi Katsuno, Nisshin, JP;
Tsuyoshi Ishikawa, Nisshin, JP;
Takeo Yamamoto, Obu, JP;
Takeshi Endo, Toyota, JP;
Jun Morimoto, Nisshin, JP;
Hirokazu Fujiwara, Miyoshi, JP;
Yukihiko Watanabe, Nagoya, JP;
Takashi Katsuno, Nisshin, JP;
Tsuyoshi Ishikawa, Nisshin, JP;
DENSO CORPORATION, Kariya, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota, JP;
Abstract
A SiC semiconductor device having a Schottky barrier diode includes: a substrate made of SiC and having a first conductive type, wherein the substrate includes a main surface and a rear surface; a drift layer made of SiC and having the first conductive type, wherein the drift layer is disposed on the main surface of the substrate and has an impurity concentration lower than the substrate; a Schottky electrode disposed on the drift layer and has a Schottky contact with a surface of the drift layer; and an ohmic electrode disposed on the rear surface of the substrate. The Schottky electrode directly contacts the drift layer in such a manner that a lattice of the Schottky electrode is matched with a lattice of the drift layer.