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For the Inventor, By the Inventor

Miyoshi, Japan

Hirokazu Fujiwara

This inventor holds 17 USPTO granted patents and 1 EPO patent. Top assignees: Toyota Jidosha Kabushiki Kaisha, Denso Corporation, Denso Corpora Tion. Active years: 2010-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hirokazu Fujiwara. Retrieved from https://idiyas.com/inventor/hirokazu-fujiwara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 17

% Patents Active = 58.8


Average Co-Inventor Count = 4.3

ph-index = 3

Forward Citations = 30(Granted Patents)


Location History:

  • Nishikamo-gun, JP (2010 - 2012)
  • Aichi-ken, JP (2012)
  • Miyoshi, JP (2013 - 2018)

Company Filing History:

goldMedal16 out of 38,912 
 
Toyota Jidosha Kabushiki Kaisha
 patents
silverMedal12 out of 20,407 
 
Denso Corporation
 patents
bronzeMedal1 out of 240 
 
Denso Corpora Tion
 patents
where one patent can have more than one assignee

Years Active: 2010-2018

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17 patents (USPTO):Explore Patents
1. 10020390 - Semiconductor device and semiconductor device manufacturing method (2018-07-10),
2. 9954096 - Switching device and method of manufacturing the same (2018-04-24),
3. 9899469 - Semiconductor device and manufacturing method thereof (2018-02-20),
4. 9853141 - Semiconductor device with front and rear surface electrodes on a substrate having element and circumferential regions, an insulating gate type switching element in the element region being configured to switch between the front and rear surface electrodes (2017-12-26),
5. 9780205 - Insulated gate type semiconductor device having floating regions at bottom of trenches in cell region and circumferential region and manufacturing method thereof (2017-10-03),
6. 9607836 - Semiconductor device and manufacturing method of semiconductor device (2017-03-28),
7. 9201094 - Wafer examination device and wafer examination method (2015-12-01),
8. 9142411 - Method for producing semiconductor device (2015-09-22),
9. 8748975 - Switching element and manufacturing method thereof (2014-06-10),
10. 8470672 - Method of manufacturing silicon carbide semiconductor device (2013-06-25),
11. 8440524 - Semiconductor device manufacturing method (2013-05-14),
12. 8436365 - SiC semiconductor device having Schottky barrier diode and method for manufacturing the same (2013-05-07),
13. 8324704 - Silicon carbide semiconductor device with Schottky barrier diode and method of manufacturing the same (2012-12-04),
14. 8168485 - Semiconductor device making method (2012-05-01),
15. 8164100 - Semiconductor device and method of manufacturing thereof (2012-04-24),

Title: The Innovative Journey of Hirokazu Fujiwara

Introduction: Hirokazu Fujiwara, a visionary inventor hailing from Miyoshi, Japan, has left an indelible mark on the field of inventions with his groundbreaking work. With a total of 17 patents to his name, Fujiwara's commitment to pushing the boundaries of technological advancement is truly commendable.

Latest Patents:

1. Semiconductor device and semiconductor device manufacturing method: This patent showcases Fujiwara's ingenuity in developing a technique that enhances voltage resistance through a depletion layer, revolutionizing semiconductor devices.

2. Switching device and method of manufacturing the same: Another pioneering patent by Fujiwara, this invention highlights his expertise in creating efficient and advanced switching devices using innovative semiconductor substrates.

Career Highlights: Throughout his illustrious career, Hirokazu Fujiwara has made significant contributions to renowned companies like Toyota Motors and Denso Corporation. His innovative spirit and technical prowess have propelled these organizations to new heights in the world of technology.

Collaborations: Fujiwara's success is not solely attributed to his individual brilliance but also to his collaborations with talented peers such as Yukihiko Watanabe and Masaki Konishi. Together, they have worked tirelessly to bring cutting-edge innovations to life, setting new standards in the industry.

Conclusion: In conclusion, Hirokazu Fujiwara's unwavering dedication to innovation and his exceptional problem-solving abilities have established him as a trailblazer in the realm of inventions. His remarkable achievements continue to inspire and shape the future of technology, leaving a lasting legacy for generations to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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