The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
Dec. 11, 2015
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Denso Corporation, Kariya-shi, Aichi-ken, JP;
Shinya Nishimura, Nisshin, JP;
Hirokazu Fujiwara, Miyoshi, JP;
Narumasa Soejima, Nagakute, JP;
Yuichi Takeuchi, Obu, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Denso Corporation, Kariya-shi, Aichi-ken, JP;
Abstract
A semiconductor device includes a p-type semiconductor region in contact with a bottom face of a trench gate, wherein the p-type semiconductor region includes a first p-type semiconductor region containing a first type of p-type impurities and a second p-type semiconductor region containing a second type of p-type impurities. The first p-type semiconductor region is located between the trench gate and the second p-type semiconductor region. In a view along the depth direction, the second p-type semiconductor region is located within a part of the first p-type semiconductor region. A diffusion coefficient of the second type of p-type impurities is smaller than a diffusion coefficient of the first type of p-type impurities.