The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
Dec. 09, 2013
Applicants:
Hirokazu Fujiwara, Miyoshi, JP;
Narumasa Soejima, Seto, JP;
Inventors:
Hirokazu Fujiwara, Miyoshi, JP;
Narumasa Soejima, Seto, JP;
Assignee:
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 1/06 (2006.01); G01R 31/20 (2006.01); G01R 1/067 (2006.01); G01R 31/00 (2006.01); G01R 31/02 (2006.01); G01R 31/26 (2014.01); H01L 21/66 (2006.01); H01L 21/44 (2006.01); G01N 27/20 (2006.01); G01R 31/28 (2006.01); G01R 1/04 (2006.01);
U.S. Cl.
CPC ...
G01R 1/06755 (2013.01); G01N 27/20 (2013.01); G01R 1/0491 (2013.01); G01R 1/067 (2013.01); G01R 31/00 (2013.01); G01R 31/2648 (2013.01); G01R 31/2831 (2013.01); G01R 31/2886 (2013.01); H01L 22/00 (2013.01);
Abstract
A wafer examination device includes a probe, a fusion section and a measurement section. The probe is made of a metal which reacts with silicon carbide to produce silicide. The fusion section fuses the probe to a silicon carbide wafer as an examined object. The measurement section measures an electrical property of the silicon carbide wafer through the fused probe.