The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Mar. 23, 2010
Takeo Yamamoto, Nishikamo-gun, JP;
Takeshi Endo, Toyota, JP;
Eiichi Okuno, Mizuho, JP;
Hirokazu Fujiwara, Nishikamo-gun, JP;
Masaki Konishi, Toyota, JP;
Takashi Katsuno, Nisshin, JP;
Yukihiko Watanabe, Nagoya, JP;
Takeo Yamamoto, Nishikamo-gun, JP;
Takeshi Endo, Toyota, JP;
Eiichi Okuno, Mizuho, JP;
Hirokazu Fujiwara, Nishikamo-gun, JP;
Masaki Konishi, Toyota, JP;
Takashi Katsuno, Nisshin, JP;
Yukihiko Watanabe, Nagoya, JP;
DENSO CORPORATION, Kariya, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, JP;
Abstract
A silicon carbide semiconductor device with a Schottky barrier diode includes a first conductivity type silicon carbide substrate, a first conductivity type silicon carbide drift layer on a first surface of the substrate, a Schottky electrode forming a Schottky contact with the drift layer, and an ohmic electrode on a second surface of the substrate. The Schottky electrode includes an oxide layer in direct contact with the drift layer. The oxide layer is made of an oxide of molybdenum, titanium, nickel, or an alloy of at least two of these elements.