Nishikamo-gun, Japan

Takeo Yamamoto

This inventor holds 23 USPTO granted patents and 1 EPO patent, primarily in Silicon Carbide Semiconductors. Top assignees: Toyota Jidosha Kabushiki Kaisha, Denso Corporation, Denso Corpora Tion. Active years: 2007-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takeo Yamamoto. Retrieved from https://idiyas.com/inventor/takeo-yamamoto

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 30.4


Average Co-Inventor Count = 3.4

ph-index = 6

Forward Citations = 102(Granted Patents)


Location History:

  • Nissin, JP (2007 - 2011)
  • Toyota, JP (2007 - 2011)
  • Nisshin, JP (2009 - 2011)
  • Nishikamo-gun, JP (2010 - 2012)
  • Aichi-gun, JP (2012)
  • Oobu, JP (2013)
  • Obu, JP (2013)
  • Kariya, JP (2018)

Company Filing History:


Years Active: 2007-2018

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Areas of Expertise:
Silicon Carbide
Schottky Diode
Semiconductor Device
Manufacturing Method
Impurity Regions
Junction Barrier
Constant Velocity Joint
Urea Grease Composition
Power Transmission
Differential Gear
Motor-Driven Wheel
Clamping Band
23 patents (USPTO):Explore Patents

Title: Innovations by Takeo Yamamoto

Introduction

Takeo Yamamoto, an esteemed inventor based in Nishikamo-gun, Japan, has made significant contributions to the field of semiconductor technology through his innovative designs and solutions. With a remarkable portfolio of 23 patents, Yamamoto continues to drive advancements in electronic components, establishing himself as a notable figure in the industry.

Latest Patents

Among his latest innovations are two notable patents that demonstrate his expertise in semiconductor devices. The first patent, titled “Semiconductor Device and Electronic Component Using the Same,” proposes a unique semiconductor device comprising a heat spreader and a semiconductor element. This device incorporates multiple anisotropic heat conductive planes, enhancing heat dissipation through strategic arrangements of first and second heat spreaders. Each heat spreader is designed to optimize thermal efficiency, ensuring high performance in electronic applications.

In his second patent, “Semiconductor Device Manufacturing Method,” Yamamoto introduces an innovative approach for manufacturing semiconductor devices utilizing silicon carbide substrates. This method outlines a comprehensive process involving the formation of upper and lower surface structures on the substrate, which includes depositing and annealing electrode material layers. This advanced method not only improves manufacturing efficiency but also ensures reliable ohmic contacts, crucial for the performance of semiconductor devices.

Career Highlights

Takeo Yamamoto has also built a formidable career working with renowned companies such as Toyota Motor Corporation and Denso Corporation. His tenure at these institutions has allowed him to apply his inventive skills in real-world applications, further enhancing the automotive and electronics industries. His work not only emphasizes the importance of innovation within large corporate structures but also showcases his ability to translate ideas into viable products.

Collaborations

Throughout his career, Yamamoto has collaborated with several talented professionals, including Eiichi Okuno and Hirokazu Fujiwara. These partnerships have fostered a creative environment for mutual growth and have led to the development of groundbreaking technologies. The synergy among these inventors has propelled various projects aimed at enhancing semiconductor performance and efficiency.

Conclusion

Takeo Yamamoto’s commitment to innovation in semiconductor technology is evident through his substantial patent portfolio and impactful career. His insights and advances in electronic components not only contribute to the evolution of technology but also inspire future inventors to push the boundaries of what is possible in this dynamic field. As he continues to innovate, the industry eagerly anticipates what new solutions he will unveil next.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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