The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2012
Filed:
Dec. 22, 2010
Masaki Konishi, Toyota, JP;
Hirokazu Fujiwara, Nishikamo-gun, JP;
Takeshi Endo, Obu, JP;
Takeo Yamamoto, Aichi-gun, JP;
Takashi Katsuno, Aichi-gun, JP;
Yukihiko Watanabe, Aichi-gun, JP;
Masaki Konishi, Toyota, JP;
Hirokazu Fujiwara, Nishikamo-gun, JP;
Takeshi Endo, Obu, JP;
Takeo Yamamoto, Aichi-gun, JP;
Takashi Katsuno, Aichi-gun, JP;
Yukihiko Watanabe, Aichi-gun, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, JP;
Denso Corporation, Kariya, JP;
Abstract
First, a first layer made of Ni or an alloy including Ni may be formed on an upper surface of a semiconductor layer. Next, a second layer made of silicon oxide may be formed on an upper surface of the first layer. Next, a part, which corresponds to a semiconductor region, of the second layer may be removed. Next, second conductive type ion impurities may be injected from upper sides of the first and second layers to the semiconductor layer after the removing step.