Toyota Jidosha Kabushiki Kaisha

Denso Corporation

Shell Oil Comapny

Toyoda Gosei Co., Ltd.

Jtekt Corporation

Jfe Steel Corporation

Denso Corpora Tion

Kabushiki Kaisha Mihama

Takeo Yamamoto

Eiichi Okuno

Takeshi Endo

Hirokazu Fujiwara

Masaki Konishi

Takashi Katsuno

Yukihiko Watanabe

Takuma Kakinami

Takumi Matsumoto

Tomohiko Sato

Shigekazu Yogo

Hiroyuki Takigami

Keiji Tanaka

Naoki Ito

Narumasa Soejima

Kazuhiko Sugiura

Yoshio Fuwa

Yoshikazu Kawabata

Naohiro Suzuki

Tsuyoshi Ishikawa

Jun Morimoto

Jun Kawai

Noriaki Shinoda

Shinichi Takeuchi

Atsushi Ando

Yasushi Kawamura

Hitoshi Azuma

Kazuhiro Miyajima

Mayuki Toriumi

Tetsuo Nimura

Kazuhiro Fujimori

Kazushige Ohmura

Osamu Takeuchi

Yukihiko Watanbe

Takanori Hibino

Masaaki Ogawa

Yoshinori Ozaki

Hiroaki Tashiro

Kaname Onoda

A semiconductor device includes: a heat spreader; a semiconductor element on the heat spreader; and a connection member arranged between the heat spreader and the semiconductor element. The heat spreader is arranged in an order of the first heat spreader, the second heat spreader and the first heat spreader in one direction of a plane of the heat spreader. Each of the first and second heat spreaders includes multiple anisotropic heat conductive planes having a high heat conductivity. The anisotropic heat conductive plane of the first heat spreader is in parallel to both a stacking direction and a first direction perpendicular to the stacking direction. The anisotropic heat conductive plane of the second heat spreader is in parallel to both the stacking direction and a second direction perpendicular to the stacking direction. A projection region of the semiconductor element overlaps with the second heat spreader.

Semiconductor device and electronic component using the same

A method for manufacturing a semiconductor device including a semiconductor substrate composed of silicon carbide, an upper surface electrode which contacts an upper surface of the substrate, and a lower surface electrode which contacts a lower surface of the substrate, the method including steps of: (a) forming an upper surface structure on the upper surface side of the substrate, and (b) forming a lower surface structure on the lower surface side of the substrate. The step (a) comprises steps of: (a1) depositing an upper surface electrode material layer on the upper surface of the substrate, the upper surface electrode material layer being a raw material layer of the upper surface electrode, and (a2) annealing the upper surface electrode material layer. The step (b) comprises steps of: (b1) depositing a lower surface electrode material layer on the lower surface of the substrate, the lower surface electrode material layer being a raw material layer of the lower surface electrode, and (b2) annealing the lower surface electrode material layer with a laser to make an ohmic contact between the lower surface electrode and the substrate.

Semiconductor device manufacturing method

A SiC semiconductor device having a Schottky barrier diode includes: a substrate made of SiC and having a first conductive type, wherein the substrate includes a main surface and a rear surface; a drift layer made of SiC and having the first conductive type, wherein the drift layer is disposed on the main surface of the substrate and has an impurity concentration lower than the substrate; a Schottky electrode disposed on the drift layer and has a Schottky contact with a surface of the drift layer; and an ohmic electrode disposed on the rear surface of the substrate. The Schottky electrode directly contacts the drift layer in such a manner that a lattice of the Schottky electrode is matched with a lattice of the drift layer.

SiC semiconductor device having Schottky barrier diode and method for manufacturing the same

A silicon carbide semiconductor device with a Schottky barrier diode includes a first conductivity type silicon carbide substrate, a first conductivity type silicon carbide drift layer on a first surface of the substrate, a Schottky electrode forming a Schottky contact with the drift layer, and an ohmic electrode on a second surface of the substrate. The Schottky electrode includes an oxide layer in direct contact with the drift layer. The oxide layer is made of an oxide of molybdenum, titanium, nickel, or an alloy of at least two of these elements.

Silicon carbide semiconductor device with Schottky barrier diode and method of manufacturing the same

A method of making a semiconductor device includes forming a p-type semiconductor region to an n-type semiconductor substrate in such a manner that the p-type semiconductor region is partially exposed to a top surface of the semiconductor substrate, forming a Schottky electrode of a first material in such a manner that the Schottky electrode is in Schottky contact with an n-type semiconductor region exposed to the top surface of the semiconductor substrate, and forming an ohmic electrode of a second material different from the first material in such a manner that the ohmic electrode is in ohmic contact with the exposed p-type semiconductor region. The Schottky electrode is formed earlier than the ohmic electrode.

Semiconductor device making method

First, a first layer made of Ni or an alloy including Ni may be formed on an upper surface of a semiconductor layer. Next, a second layer made of silicon oxide may be formed on an upper surface of the first layer. Next, a part, which corresponds to a semiconductor region, of the second layer may be removed. Next, second conductive type ion impurities may be injected from upper sides of the first and second layers to the semiconductor layer after the removing step.

Forming impurity regions in silicon carbide devices

A constant velocity universal joint is provided, having a hollow outer joint member, an inner joint member, an outer roller including a cylindrical surface, an inner roller including a concave sphere, and plural leg shafts each including a convex sphere formed in a tip portion and engaging with the concave sphere, where the cylindrical surface of the outer roller satisfies the following:1&#x3e;(1&#x2212;cos &#x3b8;)/2+&#x3bc;+&#x3bc;12&#x3e;3(1&#x2212;cos &#x3b8;)/2&#x2212;&#x3bc;+&#x3bc;1,where Windicates a length of the cylindrical surface from a center of the leg shaft and an intersection of the cylindrical surface and an upper side taper portion of the outer roller, Windicates a length of the cylindrical surface from the center of the leg shaft and an intersection of the cylindrical surface and a lower side taper portion of the outer roller, and &#x3b8; indicates a maximum joint angle.

Constant velocity universal joint

A frictionally press-bonded member includes a steel pipe, and a stab. The steel pipe has opposite ends. The stab is frictionally press-bonded to at least one of the opposite ends of the steel pipe. The steel pipe is subjected to a normalizing treatment before being frictionally press-bonded to the stab.

Frictionally press-bonded member

A SiC semiconductor device includes: a SiC substrate; a SiC drift layer on the substrate having an impurity concentration lower than the substrate; a semiconductor element in a cell region of the drift layer; an outer periphery structure including a RESURF layer in a surface portion of the drift layer and surrounding the cell region; and an electric field relaxation layer in another surface portion of the drift layer so that the electric field relaxation layer is separated from the RESURF layer. The electric field relaxation layer is disposed on an inside of the RESURF layer so that the electric field relaxation layer is disposed in the cell region. The electric field relaxation layer has a ring shape.

SiC semiconductor device having outer periphery structure

Urea grease composition for constant velocity joints is provided containing base oil, one or more urea thickener compounds,  

Urea grease composition for constant velocity joints

A silicon carbide semiconductor device includes a substrate; a drift layer having a first conductivity type; an insulating layer; a Schottky electrode; an ohmic electrode; a resurf layer; and second conductivity type layers. The drift layer and the second conductivity type layers provide multiple PN diodes. Each second conductivity type layer has a radial width with respect to a center of a contact region between the Schottky electrode and the drift layer. A radial width of one of the second conductivity type layers is smaller than that of another one of the second conductivity type layers, which is disposed closer to the center of the contact region than the one of the second conductivity type layers.

Silicon carbide semiconductor device having junction barrier Schottky diode

A semiconductor device having a junction barrier Schottky diode includes: a SiC substrate; a drift layer on the substrate; an insulation film on the drift layer having an opening in a cell region; a Schottky barrier diode having a Schottky electrode contacting the drift layer through the opening of the insulation film and an ohmic electrode on the substrate; a terminal structure having a RESURF layer surrounding the cell region; and multiple second conductive type layers on an inner side of the RESURF layer. The second conductive type layers and the drift layer provide a PN diode. The Schottky electrode includes a first Schottky electrode contacting the second conductive type layers with ohmic contact and a second Schottky electrode contacting the drift layer with Schottky contact.

SIC semiconductor having junction barrier Schottky diode

A manufacturing method of a semiconductor device comprises a process of doping conductive impurities in a silicon carbide substrate, a process of forming a cap layer on a surface of the silicon carbide substrate, a process of activating the conductive impurities doped in the silicon carbide substrate, a process of oxidizing the cap layer after a first annealing process, and a process of removing the oxidized cap layer. It is preferred that the cap layer is formed from material that includes metal carbide. Since the oxidation onset temperature of metal carbide is comparatively low, the oxidization of the cap layer becomes easy if metal carbide is included in the cap layer. Specifically, it is preferred that the cap layer is formed from metal carbide that has an oxidation onset temperature of 1000 degrees Celsius or below, such as tantalum carbide.

Manufacturing method of a semiconductor device

A silicon carbide semiconductor device includes a drift layer having first conductive type on a substrate, a cell region in the drift layer, a schottky electrode on the drift layer and multiple second conductive type layers in the cell region. The second conductive type layers are separated from each other and contact the schottky electrode. A size and an impurity concentration of the second conductive type layers and a size and an impurity concentration of a portion of the drift layer sandwiched between the second conductive type layers are determined so that a charge quantity of the second conductive type layers is equal to a charge quantity of the portion. Hereby, the pressure-proof JBS and low resistivity second conductive type layers arranged on a surface of the drift layer to provide a PN diode, can be obtained.

Silicon carbide semiconductor device having junction barrier schottky diode

An SiC semiconductor device is provided, which comprises: a substrate made of silicon carbide and having a principal surface; a drift layer made of silicon carbide and disposed on the principal surface; an insulating layer disposed on the drift layer and including an opening; a Schottky electrode contacting with the drift layer through the opening; a termination structure disposed around an outer periphery of the opening; and second conductivity type layers disposed in a surface part of the drift layer, contacting the Schottky electrode, surrounded by the termination structure, and separated from one another. The second conductivity type layers include a center member and ring members. Each ring member surrounds the center member and is arranged substantially in a point symmetric manner with respect to the center member.

Silcon carbide semiconductor device having schottky barrier diode and method for manufacturing the same

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Nishikamo-gun, Japan

Takeo Yamamoto