The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2012
Filed:
Aug. 04, 2009
Takeshi Endo, Toyota, JP;
Eiichi Okuno, Mizuho, JP;
Takeo Yamamoto, Nishikamo-gun, JP;
Hirokazu Fujiwara, Nishikamo-gun, JP;
Masaki Konishi, Toyota, JP;
Yukihiko Watanabe, Nagoya, JP;
Takashi Katsuno, Nisshin, JP;
Takeshi Endo, Toyota, JP;
Eiichi Okuno, Mizuho, JP;
Takeo Yamamoto, Nishikamo-gun, JP;
Hirokazu Fujiwara, Nishikamo-gun, JP;
Masaki Konishi, Toyota, JP;
Yukihiko Watanabe, Nagoya, JP;
Takashi Katsuno, Nisshin, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A method of making a semiconductor device includes forming a p-type semiconductor region to an n-type semiconductor substrate in such a manner that the p-type semiconductor region is partially exposed to a top surface of the semiconductor substrate, forming a Schottky electrode of a first material in such a manner that the Schottky electrode is in Schottky contact with an n-type semiconductor region exposed to the top surface of the semiconductor substrate, and forming an ohmic electrode of a second material different from the first material in such a manner that the ohmic electrode is in ohmic contact with the exposed p-type semiconductor region. The Schottky electrode is formed earlier than the ohmic electrode.