The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2013
Filed:
Feb. 18, 2011
Hirokazu Fujiwara, Miyoshi, JP;
Masaki Konishi, Toyota, JP;
Jun Kawai, Anjo, JP;
Takeo Yamamoto, Oobu, JP;
Takeshi Endo, Toyota, JP;
Takashi Katsuno, Nisshin, JP;
Yukihiko Watanabe, Nagoya, JP;
Narumasa Soejima, Seto, JP;
Hirokazu Fujiwara, Miyoshi, JP;
Masaki Konishi, Toyota, JP;
Jun Kawai, Anjo, JP;
Takeo Yamamoto, Oobu, JP;
Takeshi Endo, Toyota, JP;
Takashi Katsuno, Nisshin, JP;
Yukihiko Watanabe, Nagoya, JP;
Narumasa Soejima, Seto, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, JP;
Denso Corporation, Kariya, JP;
Abstract
A method for manufacturing a semiconductor device including a semiconductor substrate composed of silicon carbide, an upper surface electrode which contacts an upper surface of the substrate, and a lower surface electrode which contacts a lower surface of the substrate, the method including steps of: (a) forming an upper surface structure on the upper surface side of the substrate, and (b) forming a lower surface structure on the lower surface side of the substrate. The step (a) comprises steps of: (a1) depositing an upper surface electrode material layer on the upper surface of the substrate, the upper surface electrode material layer being a raw material layer of the upper surface electrode, and (a2) annealing the upper surface electrode material layer. The step (b) comprises steps of: (b1) depositing a lower surface electrode material layer on the lower surface of the substrate, the lower surface electrode material layer being a raw material layer of the lower surface electrode, and (b2) annealing the lower surface electrode material layer with a laser to make an ohmic contact between the lower surface electrode and the substrate.