The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2010
Filed:
Apr. 20, 2009
Hirokazu Fujiwara, Nishikamo-gun, JP;
Masaki Konishi, Toyota, JP;
Takeo Yamamoto, Nishikamo-gun, JP;
Eiichi Okuno, Mizuho, JP;
Yukihiko Watanbe, Nagoya, JP;
Takashi Katsuno, Ichinomiya, JP;
Hirokazu Fujiwara, Nishikamo-gun, JP;
Masaki Konishi, Toyota, JP;
Takeo Yamamoto, Nishikamo-gun, JP;
Eiichi Okuno, Mizuho, JP;
Yukihiko Watanbe, Nagoya, JP;
Takashi Katsuno, Ichinomiya, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota, JP;
Denso Corporation, Kariya, JP;
Abstract
A manufacturing method of a semiconductor device comprises a process of doping conductive impurities in a silicon carbide substrate, a process of forming a cap layer on a surface of the silicon carbide substrate, a process of activating the conductive impurities doped in the silicon carbide substrate, a process of oxidizing the cap layer after a first annealing process, and a process of removing the oxidized cap layer. It is preferred that the cap layer is formed from material that includes metal carbide. Since the oxidation onset temperature of metal carbide is comparatively low, the oxidization of the cap layer becomes easy if metal carbide is included in the cap layer. Specifically, it is preferred that the cap layer is formed from metal carbide that has an oxidation onset temperature of 1000 degrees Celsius or below, such as tantalum carbide.