The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
Dec. 12, 2012
Hirokazu Fujiwara, Miyoshi, JP;
Yukihiko Watanabe, Nagoya, JP;
Narumasa Soejima, Seto, JP;
Toshimasa Yamamoto, Ichinomiya, JP;
Yuichi Takeuchi, Obu, JP;
Hirokazu Fujiwara, Miyoshi, JP;
Yukihiko Watanabe, Nagoya, JP;
Narumasa Soejima, Seto, JP;
Toshimasa Yamamoto, Ichinomiya, JP;
Yuichi Takeuchi, Obu, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-Shi, JP;
Denso Corporation, Kariya-Shi, JP;
Abstract
A switching element is provided having a semiconductor substrate. A trench gate electrode is formed in the upper surface of the semiconductor substrate. An n-type first semiconductor region, a p-type second semiconductor region, and an n-type third semiconductor region are formed in a region in contact with a gate insulating film in the semiconductor substrate. At a position below the second semiconductor region, there is formed a p-type fourth semiconductor region connected to the second semiconductor region and opposing the gate insulating film via the third semiconductor region and containing boron. A high-concentration-carbon containing region having a carbon concentration higher than that of a semiconductor region exposed on the lower surface of the semiconductor substrate is formed in at least a part of the portion of the third semiconductor region, positioned between the fourth semiconductor region and the gate insulating film, that is in contact with the fourth semiconductor region.