The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2015

Filed:

Nov. 26, 2013
Applicants:

Masatoshi Tsujimura, Toyota, JP;

Hirokazu Fujiwara, Miyoshi, JP;

Tomoo Morino, Anjo, JP;

Narumasa Soejima, Seto, JP;

Inventors:

Masatoshi Tsujimura, Toyota, JP;

Hirokazu Fujiwara, Miyoshi, JP;

Tomoo Morino, Anjo, JP;

Narumasa Soejima, Seto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/04 (2006.01); H01L 21/673 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/046 (2013.01); H01L 21/67303 (2013.01); H01L 29/1608 (2013.01);
Abstract

A method for producing a semiconductor device includes: an arranging process of arranging a plurality of silicon carbide wafers having opposed first and surfaces so that the first surface and the second surface of adjacent silicon carbide wafers face each other and are separated in parallel; and a heat treatment process of heating the arranged plurality of silicon carbide wafers so that the first surface of each silicon carbide wafer becomes higher in temperature than the second surface thereof, and, in the adjacent silicon carbide wafers, the second surface of one silicon carbide wafer becomes higher in temperature than the first surface of the other silicon carbide wafer that faces the second surface.


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