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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9853141 B1

PDFFull Text
Date of Patent:
Dec. 26, 2017

Filed:

Aug. 04, 2014

Semiconductor device with front and rear surface electrodes on a substrate having element and circumferential regions, an insulating gate type switching element in the element region being configured to switch between the front and rear surface electrodes

Applicants:

Jun Saito, Nagoya, JP;

Hirokazu Fujiwara, Miyoshi, JP;

Tomoharu Ikeda, Nisshin, JP;

Yukihiko Watanabe, Nagoya, JP;

Toshimasa Yamamoto, Ichinomiya, JP;

Inventors:

Jun Saito, Nagoya, JP;

Hirokazu Fujiwara, Miyoshi, JP;

Tomoharu Ikeda, Nisshin, JP;

Yukihiko Watanabe, Nagoya, JP;

Toshimasa Yamamoto, Ichinomiya, JP;

Assignees:

TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;

DENSO CORPORATION, Kariya, JP;

Attorney:

Oliff PLC

Primary Examiner:

Cory Eskridge

Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 29/10 (2006.01); H01L 29/167 (2006.01); H01L 29/739 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 21/76237 (2013.01); H01L 29/0619 (2013.01); H01L 29/0623 (2013.01); H01L 29/0649 (2013.01); H01L 29/105 (2013.01); H01L 29/167 (2013.01); H01L 29/7811 (2013.01); H01L 29/16 (2013.01); H01L 29/1608 (2013.01); H01L 29/7395 (2013.01);
Abstract

Higher voltage resistance is accomplished by expanding a depletion layer more quickly within a circumferential region. A semiconductor device includes an element region, in which an insulated gate type switching element is provided, and the circumferential region. A first trench and a second trench spaced apart from the first trench are provided in the front surface in the circumferential region. Insulating films are provided in the first trench and the second trench. A fourth region of the second conductivity type is provided so as to extend from a bottom surface of the first trench to a bottom surface of the second trench. A fifth region of the first conductivity type continuous from the third region is provided under the fourth region.

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