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For the Inventor, By the Inventor

Nisshin, Japan

Tomoharu Ikeda

USPTO Granted Patents = 7

Average Co-Inventor Count = 2.9

ph-index = 2

Forward Citations = 11(Granted Patents)


Location History:

  • Nisshin, JP (2014 - 2018)
  • Nissin, JP (2019)

Company Filing History:

goldMedal7 out of 36,546 
 
Toyota Jidosha Kabushiki Kaisha
 patents
silverMedal4 out of 19,707 
 
Denso Corporation
 patents
where one patent can have more than one assignee

Years Active: 2014-2019

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7 patents (USPTO):Explore Patents
1. 10319831 - Semiconductor device with a gate electrode positioned in a semiconductor substrate (2019-06-11),
2. 10020390 - Semiconductor device and semiconductor device manufacturing method (2018-07-10),
3. 9853141 - Semiconductor device with front and rear surface electrodes on a substrate having element and circumferential regions, an insulating gate type switching element in the element region being configured to switch between the front and rear surface electrodes (2017-12-26),
4. 9780205 - Insulated gate type semiconductor device having floating regions at bottom of trenches in cell region and circumferential region and manufacturing method thereof (2017-10-03),
5. 9755042 - Insulated gate semiconductor device and method for manufacturing the insulated gate semiconductor device (2017-09-05),
6. 9698017 - Manufacturing method of semiconductor device (2017-07-04),
7. 8659052 - Semiconductor device and method for manufacturing the same (2014-02-25),

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