The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2018
Filed:
Aug. 04, 2014
Jun Saito, Nagoya, JP;
Hirokazu Fujiwara, Miyoshi, JP;
Tomoharu Ikeda, Nisshin, JP;
Yukihiko Watanabe, Nagoya, JP;
Toshimasa Yamamoto, Ichinomiya, JP;
Jun Saito, Nagoya, JP;
Hirokazu Fujiwara, Miyoshi, JP;
Tomoharu Ikeda, Nisshin, JP;
Yukihiko Watanabe, Nagoya, JP;
Toshimasa Yamamoto, Ichinomiya, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A technique achieving a higher voltage resistance by a depletion layer extending quickly within a circumferential region is provided. A semiconductor device includes an element region in which an insulated gate type switching element is provided and a circumferential region adjacent to the element region. First and second trenches are provided in the circumferential region. A front surface region of the second-conductivity-type is provided between the first and second trenches. First and second bottom surface regions of the second-conductivity-type are provided in bottom surface ranges of the first and second trenches. First and second side surface regions of the second-conductivity-type connecting the front surface region and the first or second bottom surface region is provided along side surfaces of the first and second trenches. Low area density regions are provided in at least parts of the first and second side surface regions.