The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Aug. 30, 2011
Takeshi Endo, Toyota, JP;
Shinichiro Miyahara, Nisshin, JP;
Tomoo Morino, Anjo, JP;
Masaki Konishi, Toyota, JP;
Hirokazu Fujiwara, Miyoshi, JP;
Jun Morimoto, Nisshin, JP;
Tsuyoshi Ishikawa, Nisshin, JP;
Takashi Katsuno, Nisshin, JP;
Yukihiko Watanabe, Nagoya, JP;
Takeshi Endo, Toyota, JP;
Shinichiro Miyahara, Nisshin, JP;
Tomoo Morino, Anjo, JP;
Masaki Konishi, Toyota, JP;
Hirokazu Fujiwara, Miyoshi, JP;
Jun Morimoto, Nisshin, JP;
Tsuyoshi Ishikawa, Nisshin, JP;
Takashi Katsuno, Nisshin, JP;
Yukihiko Watanabe, Nagoya, JP;
DENSO CORPORATION, Kariya, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, JP;
Abstract
A method of manufacturing a semiconductor device includes forming a drift layer on a substrate; forming a base layer on the drift layer; forming a trench to penetrate the base layer and to reach the drift layer; rounding off a part of a shoulder corner and a part of a bottom corner of the trench; covering an inner wall of the trench with an organic film; implanting an impurity to a surface portion of the base layer; forming a source region by activating the implanted impurity; and removing the organic film after the source region is formed, in which the substrate, the drift layer, the base layer and the source region are made of silicon carbide, and the implanting and the activating of the impurity are performed under a condition that the trench is covered with the organic film.