The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Dec. 01, 2011
Hiroki Watanabe, Tokai, JP;
Yasuo Kitou, Okazaki, JP;
Yasushi Furukawa, Obu, JP;
Kensaku Yamamoto, Chiryu, JP;
Hidefumi Takaya, Toyota, JP;
Masahiro Sugimoto, Toyota, JP;
Yukihiko Watanabe, Nagoya, JP;
Narumasa Soejima, Seto, JP;
Tsuyoshi Ishikawa, Nisshin, JP;
Hiroki Watanabe, Tokai, JP;
Yasuo Kitou, Okazaki, JP;
Yasushi Furukawa, Obu, JP;
Kensaku Yamamoto, Chiryu, JP;
Hidefumi Takaya, Toyota, JP;
Masahiro Sugimoto, Toyota, JP;
Yukihiko Watanabe, Nagoya, JP;
Narumasa Soejima, Seto, JP;
Tsuyoshi Ishikawa, Nisshin, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A manufacturing method of an SiC single crystal includes preparing an SiC substrate, implanting ions into a surface portion of the SiC substrate to form an ion implantation layer, activating the ions implanted into the surface portion of the SiC substrate by annealing, chemically etching the surface portion of the SiC substrate to form an etch pit that is caused by a threading screw dislocation included in the SiC substrate and performing an epitaxial growth of SiC to form an SiC growth layer on a surface of the SiC substrate including an inner wall of the etch pit in such a manner that portions of the SiC growth layer grown on the inner wall of the etch pit join with each other.